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  vishay ls485s document number 85565 rev. 1.4, 13-apr-04 vishay semiconductors www.vishay.com 1 9612009 switching diode applications general purposes mechanical data case: quadromelf glass case (sod-80) weight: approx. 34 mg cathode band color: black packaging codes/options: gs18 / 10 k per 13" reel (8 mm tape), 10 k/box gs08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box parts table absolute maximum ratings t amb = 25 c, unless otherwise specified thermal characteristics t amb = 25 c, unless otherwise specified part type differentiation ordering code remarks ls485s v rrm = 200 v LS485S-GS18 or ls485s-gs08 tape and reel parameter test condition symbol value unit peak reverse voltage i r = 100 av rrm 200 v reverse voltage v r 180 v forward current i f 200 ma forward peak current f = 50 hz i fm 500 ma peak forward surge current t p = 1 si fsm 4a parameter test condition symbol value unit junction ambient on pc board 50 mm x 50 mm x 1.6 mm r thja 500 k/w junction temperature t j 150 c storage temperature range t stg - 55 to +150 c
www.vishay.com 2 document number 85565 rev. 1.4, 13-apr-04 vishay ls485s vishay semiconductors electrical characteristics t amb = 25 c, unless otherwise specified package dimensions in mm (inches) parameter test condition symbol min ty p. max unit forward voltage i f = 10 ma, t j = - 40 c v f 1.2 v i f = 10 ma, t j = 25 c v f 1.1 v i f = 10 ma, t j = 125 c v f 1.1 v reverse current v r = 10 v, t j = - 40 c i r 25 na v r = 10 v, t j = 25 c i r 25 na v r = 10 v, t j = 125 c i r 150 na breakdown voltage i r = 100 a, t j = - 40 c v (br) 200 v i r = 100 a, t j = 25 c v (br) 200 v i r = 100 a, t j = 125 c v (br) 200 v diode capacitance v r = 0 v, f = 1 mhz c d 5pf 96 12071 2.50 (0.098) max 5 (0.197) ref 1.25 (0.049) min 2 (0.079) min mounting pad layout cathode indification 1.5 0.1 (0.06 0.004) 0.47 max. (0.02) 3.5 0.2 (0.14 0.008) glass case quadro melf / sod 80 jedec do 213 aa technical drawings according to din specifications 1.7 (0.07) glass > r 3 (r 0.12) glass
vishay ls485s document number 85565 rev. 1.4, 13-apr-04 vishay semiconductors www.vishay.com 3 ozone depleting substa nces policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423


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